FS20A60CT

20.0AmpereSurfaceMountDualCommonAnodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

FSD20A60

THYRISTORMODULE(SINGLEPHASEBRIDGETYPE)

FSU20A60

FRD-ForPowerFactorImprovementHighFrequencyRectification

HBTA20A60

INNERINSULATEDTYPETRIAC(IITO-220PACKAGE)

GeneralDescription TheTriacHBTA8A60issuitableforACswitchingapplication,phasecontrolapplicationsuchasheatercontrol,motorcontrol,lightingcontrol,andstaticswitchingrelay. Features *RepetitivePeakOff-StateVoltage:600V *R.M.SOn-stateCurrent(IT(RMS)=20A) *HighCommu

HTP20A60

NONINSULATEDTYPETRIAC(TO-220PACKAGE)

ITK20A60U

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.165Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrob

ITK20A60W

iscN-ChannelMOSFETTransistor

K20A60U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=12S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

K20A60W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

KCU20A60

FRED