NON INSULATED TYPE TRIAC (TO-220 PACKAGE)

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Huashan

华汕电子器件

双向可控硅

Huashan

华汕电子器件

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.165Ω (typ.) • Low leakage current: IDSS = 100μ A (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for rob

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：288.94 Kbytes 页数：2 Pages

ISC

无锡固电

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝