B1012RW

B1000RWSERIES

BC1012KT

Plastic-EncapsulateMOSFETS

FEATURE High-SideSwitching LowOn-Resistance LowThreshold FastSwitchingSpeed ESDprotected APPLICATIONS Drivers:Relays,Solenoids,Lamps, BatteryOperatedSystems PowerSupplyConverterCircuits Load/PowerSwitchingCellPhones,Pagers Hammers,Displays,Memorie

BCL-1012

CompressionStyleRingTongueTerminalfor1/0AWGWire,StudSize1/2

BCL-1012-PL

CompressionStyleRingTongueTerminalfor1/0AWGWire,StudSize1/2,Plated

BCL-1012-WP

CompressionStyleRingTongueTerminalfor1/0AWGWire,StudSize1/2,Un-Plated,WidePad

BCW1012KW

Plastic-EncapsulateMOSFETS

GENERRALDESCRIPTION ThisSingleN-ChannelMOSFEThasbeendesignedusingadvanced PowerTrenchprocesstooptimizetheRDS(ON). FEATURE High-SideSwitching LowOn-Resistance LowThreshold FastSwitchingSpeed ESDprotected APPLICATION Drivers:Relays,Solenoids,Lamps,Hammers,

BF1012

SiliconN-ChannelMOSFETTetrode(Forlownoise,highgaincontrolledinputstagesupto1GHzOperatingvoltage12VIntegratedstabilizedbiasnetwork

SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage12V •Integratedstabilizedbiasnetwork

BF1012S

SiliconN-ChannelMOSFETTetrode(Forlownoise,highgaincontrolledinputstagesupto1GHzOperatingvoltage5VIntegratedstabilizedbiasnetwork)

SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork

BF1012W

SILICONN-CHANNELMOSFETTETRODE(Forlow-noise,gain-controlledinputstagesupto1GHz)

SILICONN-CHANNELMOSFETTETRODE •Forlow-noise,gain-controlledinputstagesupto1GHz •Operatingvoltage12V •IntegratedbiasNetwork

BFB1012HH

THISSPECIFICATIONDEFINESTHEELECTRICALANDMECHANICALCHARACTERISTICSOFTHEDCBRUSHLESSAXIALFLOWFAN.