ADRF5030

100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch; Wideband frequency range, 100 MHz to 20 GHz\n Non-reflective design\n Low insertion loss\n 0.7 dB typical between 0.1 GHz to 6 GHz\n 0.9 dB typical between 6 GHz to 12 GHz\n 1.2 dB typical up to 20 GHz\n High isolation\n 55 dB typical between 100 MHz to 6 GHz\n 50 dB typical between 6 GHz to 12 GHz\n 45 dB typical up to 20 GHz/li>\n High input linearity\n P0.1dB: >36 dBm typical\n IP3: 60 dBm typical\n High RF power handling\n Through path: 36 dBm peak / 33 dBm avg\n Terminated Path: 36 dBm peak / 33 dBm avg\n Hot switching path: 36 dBm peak /33 dBm avg\n\n CMOS/LVTTL compatible\n No low-frequency spur; No negative voltage generator\n Fast RF switching time: 70 ns\n RF settling time (0.1 dB): 95 ns\n Single-supply operation capability (VDD = 3.3 V, VSS = 0 V)\n 20-terminal, 3 mm x 3 mm LGA package\n Pin Compatible with ADRF5022 & ADRF5026;

The ADRF5030 is a non-reflective, single-pole double-throw(SPDT) switch manufactured using the silicon on insulator (SOI)process. The ADRF5030 operates from 100 MHz to 20 GHz withinsertion loss of lower than 1.2 dB and isolation of higher than45 dB. The device has an RF input power handling capability of33 dBm average/36 dBm peak for both RFC and RFx throughpaths, termination paths, and hot switching for both RFC andRFx ports. The ADRF5030 operates with dual-supply voltagesof ±3.3 V. The ADRF5030 employs complementary metal-oxidesemiconductor (CMOS) and low-voltage transistor to transistor logic(LVTTL)-compatible control.\n\nThe ADRF5030 can also operate with a single positive supply voltage(VDD) applied while the negative supply voltage (VSS) is tied toground. In this operating condition, the small signal performance ismaintained while the switching characteristics, linearity, and powerhandling performance are derated. See Table 2 for more details.\n\nThe ADRF5030 is pin compatible with the ADRF5022 andADRF5026, and also pin compatible with ADRF5031, a slow-switching,low cut-off version, which operates between 9 kHz to20 GHz.\n\nThe ADRF5030 is packaged in a 20-terminal, 3 mm × 3 mm,RoHS-compliant, land grid array (LGA). The ADRF5030 operatesfrom −40°C to +105°C.

ADRF5030

100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch

FEATURES ►Widebandfrequencyrange,100MHzto20GHz ►Non-reflective50Ωdesign ►Lowinsertionloss ►0.7dBtypicalbetween0.1GHzto6GHz ►0.9dBtypicalbetween6GHzto12GHz ►1.2dBtypicalupto20GHz ►Highisolation ►55dBtypicalbetween100MHzto6GHz ►50dBtypic

ADRF5030BCCZN

100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch

FEATURES ►Widebandfrequencyrange,100MHzto20GHz ►Non-reflective50Ωdesign ►Lowinsertionloss ►0.7dBtypicalbetween0.1GHzto6GHz ►0.9dBtypicalbetween6GHzto12GHz ►1.2dBtypicalupto20GHz ►Highisolation ►55dBtypicalbetween100MHzto6GHz ►50dBtypic

ADRF5030BCCZN-R7

100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch

FEATURES ►Widebandfrequencyrange,100MHzto20GHz ►Non-reflective50Ωdesign ►Lowinsertionloss ►0.7dBtypicalbetween0.1GHzto6GHz ►0.9dBtypicalbetween6GHzto12GHz ►1.2dBtypicalupto20GHz ►Highisolation ►55dBtypicalbetween100MHzto6GHz ►50dBtypic

ADRF5030-EVALZ

100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch

FEATURES ►Widebandfrequencyrange,100MHzto20GHz ►Non-reflective50Ωdesign ►Lowinsertionloss ►0.7dBtypicalbetween0.1GHzto6GHz ►0.9dBtypicalbetween6GHzto12GHz ►1.2dBtypicalupto20GHz ►Highisolation ►55dBtypicalbetween100MHzto6GHz ►50dBtypic

AMDLH5030S

MoldedInductor(MetalAlloy)

Features •Shieldedconstruction •Softsaturation •LowDCR,HighEfficiency •Designedforswitchingfrequenciesbetween100KHz-2MHz Applications •DC/DCSwitchingconverters •PowersuppliesforNotebooks,workstations,andServers •LowProfileapplications •Highcurrent,transient

AMPLH5030S

MoldedInductor(Carbonyl)

Features •Shieldedconstruction •Softsaturation •LowDCR,HighEfficiency •Designedforswitchingfrequenciesbetween100KHz-2MHz Applications •DC/DCSwitchingconverters •PowersuppliesforNotebooks,workstations,andServers •LowProfileapplications •Highcurrent,transientloadappl

APT5030AN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT5030AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

APT5030AVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.