ADRF5030BCCZN-R7中文资料亚德诺数据手册PDF规格书

FEATURES

► Wideband frequency range, 100 MHz to 20 GHz

► Non-reflective 50 Ω design

► Low insertion loss

► 0.7 dB typical between 0.1 GHz to 6 GHz

► 0.9 dB typical between 6 GHz to 12 GHz

► 1.2 dB typical up to 20 GHz

► High isolation

► 55 dB typical between 100 MHz to 6 GHz

► 50 dB typical between 6 GHz to 12 GHz

► 45 dB typical up to 20 GHz

► High input linearity

► P0.1dB: >36 dBm typical

► IP3: >60 dBm typical

► High RF power handling

► Through path: 36 dBm peak/33 dBm average

► Terminated path: 36 dBm peak/33 dBm average

► Hot switching: 36 dBm peak/33 dBm average

► CMOS/LVTTL compatible

► No low-frequency spur; no negative voltage generator

► RF switching time: 70 ns

► RF settling time (0.1 dB): 95 ns

► Single-supply operation capability (VDD = 3.3 V, VSS = 0 V)

► 20-terminal, 3 mm × 3 mm, LGA package

► Pin compatible with ADRF5022 and ADRF5026

APPLICATIONS

► Test instrumentation

► Military radios, radars, electronic counter measures (ECMs)

► Microwave radios and very small aperture terminals (VSATs)