0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

FEATURES ► Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier ► RF input and RF output AC-coupled ► Integrated drain bias inductors ► Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm) ► Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)

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AD

亚德诺

0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with asaturated output power (POUT) of 39.5 dBm, power added efficiency(PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHzto 5 GHz at an input power (PIN) of 16.0 dBm. The RF input andRF output are internally matched and AC-coupled. A Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier\n RF input and RF output AC-coupled\n Integrated drain bias inductors\n Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)\n Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)\n\n PAE: 40% typi;

ADI

亚德诺

QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY

GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. FEATURES • Low threshold voltage of 0.7V • Low input capacitance • Low Vos 2mV typical • High input impeda

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ALD

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET

文件：58.83 Kbytes 页数：6 Pages

ALD

QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY

GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor

文件：82.82 Kbytes 页数：9 Pages

ADL