20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

文件：2.49138 Mbytes 页数：28 Pages

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20 GHz 至 54 GHz GaAs pHEMT MMIC 31 dBm (1 W) 功率放大器

ADPA7008CHIP 是一款砷化镓 (GaAs) 假晶高电子迁移率晶体管 (pHEMT) 微波单片集成电路 (MMIC) 31 dBm 饱和输出功率（1 W）分布式功率放大器，工作频率为 20 GHz 至 54 GHz。该放大器提供 18 dB 的增益， 1 dB 的压缩 (P1dB) 时的输出功率为 30.5dBm， 在 22 GHz 至 42 GHz 时，输出三阶交调 (IP3) 的典型值为 38 dBm 。ADPA7008CHIP 工作时需要 5 V 的电源电压 (VDD) 输送 1500 mA 的电流，其输入和输出内部匹配到 50 Ω ，便于集成到多芯片模块 (MCM) 中。所有数 ADPA7008 芯片特性\n• 输出 P1dB ：22 GHz 到 42 GHz 时为 30.5 dBm（典型值）\n\n• PSAT：22 GHz 到 42 GHz 时为 31 dBm（典型值）\n\n• 增益：22 GHz 到 42 GHz 范围内为 18 dB（典型值）\n\n• 输入回波损耗：22 GHz 到 42 GHz 范围内为 22 dB（典型值）\n\n• 输出回波损耗：22 GHz 到 42 GHz 范围内为 23 dB（典型值）\n\n• 输出 IP3 ：22 GHz 到 42 GHz 时为 38 dBm（典型值）\n\n• 电源电压：1500 mA 时为 5 V（典型值;

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20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

文件：2.49138 Mbytes 页数：28 Pages

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亚德诺

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

文件：2.49138 Mbytes 页数：28 Pages

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亚德诺

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

GENERAL DESCRIPTION The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip powe

文件：2.49138 Mbytes 页数：28 Pages

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亚德诺

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

文件：403.59 Kbytes 页数：26 Pages

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亚德诺

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier

文件：403.59 Kbytes 页数：26 Pages

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