ADPA7008AEHZ-R7中文资料亚德诺数据手册PDF规格书

GENERAL DESCRIPTION

The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transistor (pHEMT), monolithic microwave integrated

circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)

distributed power amplifier with an integrated temperature compensated

on-chip power detector that operates from 20 GHz to 54

GHz. The amplifier provides 17.5 dB of small signal gain, an output

power for 1 dB compression (P1dB) of 30 dBm with an excellent

IP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008

is ideal for linear applications such as electronic countermeasure

and instrumentation applications requiring 31 dBm of efficient PSAT.

The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD).

The RF input and outputs are internally matched and dc blocked for

ease of integration into higher level assemblies. The ADPA7008 is

housed in a 7 mm × 7 mm, ceramic leadless package with heat sink

[LCC_HS] that exhibits low thermal resistance and is compatible

with surface-mount manufacturing techniques.

FEATURES

► Output P1dB: 30 dBm typical at 22 GHz to 40 GHz

► PSAT: 31 dBm typical at 22 GHz to 40 GHz

► Gain: 17.5 dB typical at 22 GHz to 40 GHz

► Input return loss: 12 dB typical at 22 GHz to 40 GHz

► Output return loss: 9.5 dB typical at 22 GHz to 40 GHz

► Output IP3: 37 dBm typical at 22 GHz to 40 GHz

► Supply voltage: 5 V typical at 1500 mA

► 50 Ω matched input and output

► 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS]

► Integrated power detector

APPLICATIONS

► Aerospace and defense

► Test instrumentation

► Communications