DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

FEATURES ► Wideband, internally matched, RF power amplifier ► DC-coupled input and output ► Integrated RF power detector ► Integrated temperature sensor ► Gain: 13 dB typical at 8 GHz to 16 GHz ► OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz ► PSAT: 33.5 dBm typical at 8 GHz to 16 GHz ► OIP3:

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DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

The ADPA9007-2CHIP is a 2 W, RF power amplifier that operatesfrom DC to 28 GHz. The RF input and output are internally matchedand DC-coupled. The ADPA9007-2CHIP includes an integratedtemperature-compensated RF power detector and an integratedtemperature sensor.\n\nThe ADPA9007-2CHIP amplifier provid Wideband, internally matched, RF power amplifier\n DC-coupled input and output\n Integrated RF power detector\nIntegrated temperature sensor\n\n Gain: 13 dB typical at 8 GHz to 16 GHz\n OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz\n PSAT: 33.5 dBm typical at 8 GHz to 16 GHz\n OIP3: 43.5 dBm typical at;

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