ADPA9007-2中文资料DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier数据手册ADI规格书

描述 Description

The ADPA9007-2CHIP is a 2 W, RF power amplifier that operatesfrom DC to 28 GHz. The RF input and output are internally matchedand DC-coupled. The ADPA9007-2CHIP includes an integratedtemperature-compensated RF power detector and an integratedtemperature sensor.

The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an outputpower for 1 dB compression (OP1dB) of 32.5 dBm, and an outputthird-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz.The amplifier operates from a typical supply voltage (VDD) of 15 Vand has a 500 mA typical quiescent drain current (IDQ), which isadjustable.

The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs),pseudomorphic high electron mobility transistor (pHEMT) processand is specified for operation from −55°C to +85°C.

特性 Features

Wideband, internally matched, RF power amplifier
DC-coupled input and output
Integrated RF power detector
Integrated temperature sensor

Gain: 13 dB typical at 8 GHz to 16 GHz
OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
OIP3: 43.5 dBm typical at 8 GHz to 16 GHz

应用 Application

Electronic warfare
Radar
Test and measurement equipment