Interleaved Inverting Charge Pump with Negative LDO Regulator

文件：1.06057 Mbytes 页数：25 Pages

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亚德诺

包装：盒 类别：开发板，套件，编程器 评估板 - DC/DC 与 AC/DC（离线）SMPS 描述：ADP5600 INV CHRG PUMP W/NEG LDO

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亚德诺

Complementary Enhancement Mode Field Effect Transistor

General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen F

文件：948.55 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen F

文件：948.55 Kbytes 页数：9 Pages

AOSMD

万国半导体

Fast Switching Characteristic

文件：110.18 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子