IXFM75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFM75N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFM75N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFT75N10Q

HIPERFETPOWERMOSFETSQCLASS

IXTA75N10P

N-ChannelEnhancementMode

IXTA75N10P

iscN-ChannelMOSFETTransistor

IXTC75N10

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage-:VDSS=100V(Min) •Staticdrain-sourceon-resistance:RDS(on)≤20mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Idealforhigh-frequencyswitching

IXTC75N10

N-ChannelEnhancementMode

MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXTH75N10

MegaMOSFET

IXTH75N10

MegaMOSFET

N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Lowpackageinductance(