AIIS-3400P

CompactVisionSystem

AM3400

MOSFET30VN-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION VDS=30V 12V ID(A)=5.8A R DS(ON)

AM3400A

MOSFET30VN-CHANNELENHANCEMENTMODE

DESCRIPTION AM3400AistheN-ChannelenhancementmodepowerfieldeffecttransistorsareusingtrenchDMOStechnology.Thisadvancedtrenchtechnologydevicesarewellsuitedforhighefficiencyfastswitchingapplications,lowin-linepowerlossareneededinsmalloutlinesurfacemountpackage.

AM3400N

N-Channel200-V(D-S)MOSFET

AML3400

HIGHDEFINITIONTOTALSOLUTIONHDA/VPROCESSOR

[AmlogicInc.] HIGHDEFINITIONTOTALSOLUTIONHDA/VPROCESSOR

AMS3400SRG

SuperhighdensitycelldesignforextremelylowRDS(ON)

DESCRIPTION TheAMS3400SRGistheN-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity,DMOStrenchtechnology. Thishigh-densityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageap

AN3400

AnalysisandsimulationofaBJTcomplementarypairinaself-oscillatingCFLsolution

AO3400

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3400usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3400isPb-free(meetsROHS&Sony259spec

AO3400

30VN-ChannelEnhancementModeMOSFET

30VN-ChannelEnhancementModeMOSFET VDS=30V RDS(ON),Vgs@10V,Ids@5.8A

AO3400

N-Channelenhancementmodefieldeffecttransistor

■Features ●VDS(V)=30V ●ID=5.8A(VGS=10V) ●RDS(ON)28m(VGS=10V) ●RDS(ON)33m(VGS=4.5V) ●RDS(ON)52m(VGS=2.5V)