BD237G

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

BD237NPN

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

BD237-S

NPNEPITAXIALSILICONPOWERTRANSISTOR

NPNEPITAXIALSILICONPOWERTRANSISTOR IntendedforuseinMediumPowerLinearSwitchingApplications TO126PlasticPackage

BD237STU

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively

BD237-TU

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD234/BD236/BD238respectively

BF237

TO-92PlasticPackageTransistors(NPN)

C237DS

MeetRoHS,GreenProduct.

C237S

ContactForm:C237S:1a/C337S:2aLoadVoltage:60VMaximum

CP237

SmallSignalTransistorNPN-SaturatedSwitchTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize30x30MILS DieThickness9.0MILS BaseBondingPadArea4.4x12.5MILS EmitterBondingPadArea4.4x12.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-12,000Å

CXP-237

MIXERSSUB-HARMONIC