ADM130N04

Marking：ADM130N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM130N04seriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunct

ADM130N04G

Marking：ADM130N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM130N04GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

TF130N04S

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF130N04Scombinesadvancedtrench MOSFETtechnologywithalowresistancepackageto provideextremelylowRDS(ON).Thisdeviceisideal forloadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)to

TFD130N04N

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTFD130N04Ncombinesadvancedtrench MOSFETtechnologywithalowresistancepackageto provideextremelylowRDS(ON).Thisdeviceisideal forloadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)to

TFD130N04S

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTFD130N04Scombinesadvancedtrench MOSFETtechnologywithalowresistancepackageto provideextremelylowRDS(ON).Thisdeviceisideal forloadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)to