0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：195.18 Kbytes 页数：12 Pages

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Tape and Reel Packaging

文件：395.36 Kbytes 页数：6 Pages

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Tape and Reel Packaging

文件：395.36 Kbytes 页数：6 Pages

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0.5 Ω、CMOS、1.8 V至5.5 V、2:1多路复用器/单刀双掷开关，采用BBM开关动作

ADG819是一款单芯片CMOS单刀双掷（SPDT）开关，采用亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性。它具有低功耗和+1.8 V至+5.5 V的工作电压范围，非常适合电池供电的便携式仪表应用。 接通时，ADG819的各开关在两个方向的导电性能相同。该器件为先开后合式，从而可防止开关通道时发生瞬时短路。 （如需先合后开式开关，请参考ADG820)\n\n ADG819提供6引脚SOT-23、8引脚µSOIC和2x3阵列MicroCSP三种封装。该芯片只有2.18 mm x 1.14 mm大小，因此非常适合空间受限的应用。 • 低导通电阻：0.8 Ω最大值（125°C时）\n\n• 导通电阻平坦度：0.25 Ω （最大值）\n\n• +1.8 V至+5.5 V单电源供电 \n\n• 载流能力：200 mA\n\n• 汽车应用温度范围：-40°C至+125°C;

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0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：195.18 Kbytes 页数：12 Pages

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0.5 n CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：283.38 Kbytes 页数：12 Pages

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0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：239.79 Kbytes 页数：16 Pages

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0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：239.79 Kbytes 页数：16 Pages

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0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：239.79 Kbytes 页数：16 Pages

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0.5 n CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：283.38 Kbytes 页数：12 Pages

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