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ADG836YRMZ	文件：563.59 Kbytes Page：16 Pages	0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YRMZ-REEL	文件：563.59 Kbytes Page：16 Pages	0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YRMZ-REEL7	文件：563.59 Kbytes Page：16 Pages	0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
836A	文件：97.67 Kbytes Page：6 Pages	SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur	Zetex Zetex Semiconductors
836A	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	Zetex Zetex Semiconductors
836B	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	Zetex Zetex Semiconductors
836B	文件：66.99 Kbytes Page：2 Pages	SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司
836C-X	文件：78.79 Kbytes Page：2 Pages	83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS [GORDOS] REEDRELAYS 83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS	ETC1List of Unclassifed Manufacturers 未分类制造商
A836ERW	文件：196 Kbytes Page：2 Pages	LowCost,8WDIPWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)
ADG836	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836L	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836LYRM	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836LYRM-REEL	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YCP	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YCP-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YCP-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YRM	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YRM	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YRM-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司
ADG836YRM-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司

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详细参数

型号：
ADG836YRMZ
功能描述：
IC SWITCH DUAL SPDT 10MSOP
RoHS：
是
类别：
集成电路(IC) >> 接口 - 模拟开关，多路复用器，多路分解器
系列：
-
特色产品：
MicroPak?
标准包装：
1
功能：
开关
电路：
2 x SPST - NC
导通状态电阻：
500 毫欧
电压电源：
单电源电压 -
电源，单路/双路(±)：
1.4 V ~ 4.3 V 电流 -
电源：
150nA
工作温度：
-40°C ~ 125°C
安装类型：
表面贴装
封装/外壳：
8-XFDFN
供应商设备封装：
8-XSON，SOT833-1(1.95x1）
包装：
Digi-Reel®
其它名称：
568-5557-6

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳硅原半导体有限公司	ADG836YRMZ	ADI/亚德诺		SOP	7884		询价
深圳市旺财半导体有限公司	ADG836YRMZ	ADI/亚德诺	23+	SOP	2165	全新原装现货	询价
中天科工半导体（深圳）有限公司	ADG836YRMZ	Analog Devices Inc.	23+	10-TFSOP,10-MSOP(0.118,3.00	25000	in stock接口IC-原装正品	询价
深圳好佳好科技有限公司	ADG836YRMZ	ADI	1912+	MSOP	16850	绝对原装现货	询价
深圳市云迪科技有限公司	ADG836YRMZ	ADI	22+	MSOP	3000	原装正品,优势现货供应	询价
瑞航达科技(深圳)有限公司	ADG836YRMZ	ADI		最新	1000	原装正品现货	询价
深圳市深创辉科技有限公司	ADG836YRMZ	ADI(亚德诺)			10000		询价
深圳市大联智电子有限公司	ADG836YRMZ	ADI/亚德诺	21+	SOP	34000	原装现货,一站式配套	询价
深圳市毅创辉电子科技有限公司	ADG836YRMZ	AD	23+	MSOP10	30000	全新原装正品	询价
深圳市振鑫微电子科技有限公司	ADG836YRMZ	ADI(亚德诺)	23+	N/A	589610	新到现货原厂一手货源价格秒杀代理!	询价

更多ADG836YRMZ供应商更新时间2024-4-27 10:16:00

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