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ADG836YRMZ-REEL	文件：563.59 Kbytes Page：16 Pages	0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ-REEL7	文件：563.59 Kbytes Page：16 Pages	0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
836A	文件：97.67 Kbytes Page：6 Pages	SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur	Zetex Zetex Semiconductors	Zetex
836A	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	Zetex Zetex Semiconductors	Zetex
836B	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	Zetex Zetex Semiconductors	Zetex
836B	文件：66.99 Kbytes Page：2 Pages	SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
836C-X	文件：78.79 Kbytes Page：2 Pages	83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS [GORDOS] REEDRELAYS 83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
A836ERW	文件：196 Kbytes Page：2 Pages	LowCost,8WDIPWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
ADG836	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836L	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM-REEL	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD

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详细参数

型号：
ADG836YRMZ-REEL
功能描述：
IC SWITCH DUAL SPDT 10MSOP
RoHS：
是
类别：
集成电路(IC) >> 接口 - 模拟开关，多路复用器，多路分解器
系列：
-
标准包装：
1,000
功能：
多路复用器
电路：
1 x
4：
1
导通状态电阻：
-
电压电源：
双电源电压 -
电源，单路/双路(±)：
±5V 电流 -
电源：
7mA
工作温度：
-40°C ~ 85°C
安装类型：
表面贴装
封装/外壳：
16-SOIC（0.154，3.90mm 宽）
供应商设备封装：
16-SOIC
包装：
带卷(TR)

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	ADG836YRMZ-REEL	Analog Devices Inc.	23+	10-TFSOP,10-MSOP(0.118,3.00	25000	in stock接口IC-原装正品	询价
深圳市创芯联盈电子有限公司	ADG836YRMZ-REEL	ADI	1930+	MSOP10	67500	ADI专营!正规代理,错过是损失!	询价
深圳市宇创芯科技有限公司	ADG836YRMZ-REEL	ADI/亚德诺	22+	MSOP10	9600	原装现货,优势供应,支持实单!	询价
深圳市深创辉科技有限公司	ADG836YRMZ-REEL	ADI(亚德诺)			10000		询价
深圳市英瑞芯科技有限公司	ADG836YRMZ-REEL	ADI/亚德诺	22+	MSOP10	7800	原装现货价格从优!	询价
深圳市福安瓯科技有限公司	ADG836YRMZ-REEL	ADI	22+	MSOP-10	16000	ADI合作增值服务商,优势现货,一站式配单!	询价
深圳市英博尔电子有限公司	ADG836YRMZ-REEL	ADI	23+	N/A	10000	原装优质现货订货渠道商	询价
深圳市高捷芯城科技有限公司	ADG836YRMZ-REEL	ADI(亚德诺)	23+	MSOP-10	9908	支持大陆交货,美金交易。原装现货库存。	询价
深圳市凯斯宇科技有限公司	ADG836YRMZ-REEL	AD	2022	MSOP10	437	原厂原装正品,价格超越代理	询价
深圳市豪迈兴电子有限公司	ADG836YRMZ-REEL	ADI	2339+	LowVoltageDu	6521	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

更多ADG836YRMZ-REEL供应商更新时间2024-4-30 15:14:00

详细参数

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