0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

文件：652.24 Kbytes 页数：12 Pages

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0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

文件：563.59 Kbytes 页数：16 Pages

AD

亚德诺

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

文件：652.24 Kbytes 页数：12 Pages

AD

亚德诺

0.5CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

文件：652.24 Kbytes 页数：12 Pages

AD

亚德诺

0.5 ohm CMOS 1.65V TO 3.6V Dual SPDT/2:1 MUX

GENERAL DESCRIPTION The ADG836 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The ADG836 is fully specified for 3.3 V, 2.5 V, and 1.8 V su

文件：563.59 Kbytes 页数：16 Pages

AD

亚德诺