0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：239.79 Kbytes 页数：16 Pages

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0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：239.79 Kbytes 页数：16 Pages

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0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：195.18 Kbytes 页数：12 Pages

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0.5 n CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：283.38 Kbytes 页数：12 Pages

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亚德诺

0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw (SPDT) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. FEATURES Low on resistance: 0.8

文件：239.79 Kbytes 页数：16 Pages

AD

亚德诺