650-V Direct WBG Diode

Key Features: • SiC performance • Easy paralleling • High current carrying capability • Very low junction capacitance • Highly stable VF and QRR at elevated temperatures

文件：196.03 Kbytes 页数：5 Pages

AnalogPower

MOSFET

AnalogPower

美商亚柏

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VF and Q RR at elevated temperatures

文件：245.74 Kbytes 页数：5 Pages

AnalogPower

6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.73513 Mbytes 页数：9 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

文件：708.97 Kbytes 页数：6 Pages

Cree

科锐