EC2612

40GHzSuperLowNoisePHEMT

Description TheEC2612isbasedona0.15µmgatepseudomorphichighelectronmobilitytransistor(0.15µmPHEMT)technology.Gatewidthis120µmandthe0.15µmT-shapedaluminiumgatefeatureslowresistanceandexcellentreliability.Thedeviceshowsaveryhightransconductancewhichleadsto

EC2612

40GHzSuperLowNoisepHEMT

EDAB2612

EDAB2xxx-Series

ProductDescription BasesforE-SerieCabinetswithknockoutsforcableentry.Thebaseisconstructedoutoftwosideprofileswhichcorrespondtothedepthofthecabinet,andtwocoverpanels(frontandback)withacorrespondingwidth..

FDC2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •1.1

FDC2612

N-ChannelMOSFET200V,1.5A,0.7

Features Vbs=200V b=1.5A Roson)

FDD2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •4.9A,2

FDD2612

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD2612

N-channelEnhancementModePowerMOSFET

Features VDS=200V,ID=8A RDS(ON)

FDD2612-TP

N-ChannelMOSFET200V,6.0A,0.65Q

Features ©Vos=200v +o=60A +Rosin50650@Ves=10V.

FTK2612AD

20VN-ChannelMOSFETs