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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NX8343	文件：287.46 Kbytes Page：14 Pages	LASERDIODE 1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES •Internalopticalisolator •OpticaloutputpowerPf=−2dBm •Lowthresholdcurrentlth=8mATYP.@TC=25°C •WideoperatingtemperaturerangeTC=−5to+85°C •InGaAsmonitorPIN-PD	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
S8343	文件：124.28 Kbytes Page：1 Pages	18watt;pin-basedCompactFluorescent;3500K;82CRI;GX24q-2(4-Pin)base	SATCO Satco Products, Inc.	SATCO
SGA-8343	文件：181.24 Kbytes Page：4 Pages	LowNoise,HighGainSiGeHBT [Stanford-Microdevices] ProductDescription StanfordMicrodevices’SGA-8343isahighperformanceSiGeHBTamplifierdesignedforoperationfromDCto6GHz.ThisRFdeviceusesthelatestSiliconGermaniumHeterostructureBipolarTransistor(SiGeHBT)process.TheSGA-8343isoptimizedfor3Vo	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
SGA-8343	文件：96.41 Kbytes Page：4 Pages	LowNoise,HighGainSiGeHBT ProductDescription SirenzaMicrodevices’SGA-8343isahighperformanceSiliconGermaniumHeterostructureBipolarTransistor(SiGeHBT)designedforoperationfromDCto6GHz.TheSGA-8343isoptimizedfor3Voperationbutcanbebiasedat2Vforlow-voltagebatteryoperatedsystems.Thedevice	SIRENZA SIRENZA MICRODEVICES	SIRENZA

更多AD8343-EVAL供应商更新时间2025-7-25 13:30:00