NX8343中文资料瑞萨数据手册PDF规格书

1 310 nm AlGaInAs MQW-DFB LASER DIODE

FOR 10 Gb/s APPLICATION

FEATURES

• Internal optical isolator

• Optical output power Pf = −2 dBm

• Low threshold current lth = 8 mA TYP. @ TC = 25°C

• Wide operating temperature range TC = −5 to +85°C

• InGaAs monitor PIN-PD