LASER DIODE

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION FEATURES • Internal optical isolator • Optical output power Pf = −2 dBm • Low threshold current lth = 8 mA TYP. @ TC = 25°C • Wide operating temperature range TC = −5 to +85°C • InGaAs monitor PIN-PD

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RENESAS

瑞萨

18 watt; pin-based Compact Fluorescent; 3500K; 82 CRI; GX24q-2 (4-Pin) base

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SATCO

Low Noise, High Gain SiGe HBT

[Stanford-Microdevices] Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-8343 is optimized for 3V o

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Low Noise, High Gain SiGe HBT

Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device

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SIRENZA