18 watt; pin-based Compact Fluorescent; 3500K; 82 CRI; GX24q-2 (4-Pin) base

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SATCO

Low Noise, High Gain SiGe HBT

[Stanford-Microdevices] Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-8343 is optimized for 3V o

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ETCList of Unclassifed Manufacturers

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Low Noise, High Gain SiGe HBT

Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device

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SIRENZA

Reliability Qualification Report

Qualification Overview The SGA-8343X family of products has demonstrated reliable operation by passing all qualification testing in our product qualification test plan. The “X’ designates a lead-free lead frame using Tin plated leads. The SGA-8343X has been subject to stresses such as humidity (a

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STANFORD