丝印：AD4065C5；Package：PG-TO247-3-41；650V/40A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：847.43 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD4065C5；Package：PG-TO247-3-41；CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：846.67 Kbytes 页数：11 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：309.8 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.73 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：356.56 Kbytes 页数：2 Pages

ISC

无锡固电