CD74ACT20M96芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
CD74ACT20M	文件：640.77 Kbytes Page：17 Pages	丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, 文件：640.77 Kbytes 页数：17 Pages	TI 德州仪器	TI
CD74ACT20M96	文件：640.77 Kbytes Page：17 Pages	丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, 文件：640.77 Kbytes 页数：17 Pages	TI 德州仪器	TI
CD74ACT20M96.A	文件：640.77 Kbytes Page：17 Pages	丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883, 文件：640.77 Kbytes 页数：17 Pages	TI 德州仪器	TI

更多ACT20M供应商更新时间2025-9-6 15:09:00