丝印：ACT32M；Package：SOIC；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19541 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC(D)；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19561 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC(D)；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19561 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19541 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19541 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC(D)；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19561 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC(D)；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19561 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC(D)；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19561 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC(D)；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19561 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT32M；Package：SOIC；CDx4ACT32 Quadruple 2-Input Positive-or Gates

1 Features • Inputs are TTL-voltage compatible • Buffered inputs • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • •±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Ex

文件：1.19541 Mbytes 页数：23 Pages

TI

德州仪器