丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

Dual 4-Input NAND Gate

文件：30.05 Kbytes 页数：5 Pages

TI

德州仪器

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes 页数：13 Pages

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes 页数：13 Pages

TI

德州仪器

DUAL 4-INPUT POSITIVE-NAND GATES

文件：871 Kbytes 页数：13 Pages

TI

德州仪器

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP 14SOIC

TI2

德州仪器

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP 14SOIC

TI2

德州仪器