ATS636LSETN-T

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

ATS636LSETN-T

TheATS636LSEprogrammable,truepower-onstate(TPOS),deviceisoptimizedHall-effectICandrare-earthpelletcombinationsthatswitchinresponsetomagneticsignals...

BC636

COMPLEMENTARYSILICONTRANSISTORS

BC636

PNPmediumpowertransistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.

BC636

HighCurrentTransistors(PNPSilicon)

HighCurrentTransistorsPNPSilicon

BC636

HighCurrentTransistors

HighCurrentTransistorsPNPSilicon

BC636

PNPSiliconAFTransistors(HighcurrentgainHighcollectorcurrent)

PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)

BC636

HighCurrentTransistors

BC636

PNPTypePlasticEncapsulateTransistors

FEATURE PowerDissipation:PCM:0.83mW(Tamb=25°C)

BC636

PNPEPITAXIALSILICONTRANSISTOR

SWITCHINGANDAMPLIFIERAPPLICATIONS •ComplementtoBC635/637/639