Complementary Enhancement Mode Field Effect Transistor

Description The ACE4613B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features N-channel • VDS=30V • ID=7A P-channel •

文件：670.99 Kbytes 页数：6 Pages

ACE

MOSFET

ACE ele

Power-Off Protection 짹5 V, 12 V, Quad SPST Switches with 5 廓 On Resistance

GENERAL DESCRIPTION The ADG4612/ADG4613 contain four independent single pole/single-throw (SPST) switches. The ADG4612 switches are turned on with Logic 1 on the appropriate control input. The ADG4613 has two switches with digital control logic similar to that of the ADG4612; the logic is inver

文件：393.95 Kbytes 页数：24 Pages

AD

亚德诺

4/12-Channel Audio CODEC

文件：1.13856 Mbytes 页数：69 Pages

AKM

旭化成微电子

4/12-Channel Audio CODEC

文件：1.13856 Mbytes 页数：69 Pages

AKM

旭化成微电子