ACE4613B

Complementary Enhancement Mode Field Effect Transistor

Description TheACE4613BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications. Features N-channel •VDS=30V •ID=7A P-channel •

ADG4613BRUZ

Power-OffProtection짹5V,12V,QuadSPSTSwitcheswith5廓OnResistance

GENERALDESCRIPTION TheADG4612/ADG4613containfourindependentsinglepole/single-throw(SPST)switches.TheADG4612switchesareturnedonwithLogic1ontheappropriatecontrolinput.TheADG4613hastwoswitcheswithdigitalcontrollogicsimilartothatoftheADG4612;thelogicisinver

AK4613

4/12-ChannelAudioCODEC

AK4613EQ

4/12-ChannelAudioCODEC

AK4613VQ

4/12-ChannelAudioCODEC

AKD4613

4/12-ChannelAudioCODEC

AO4613

30VDualPN-ChannelMOSFET

AO4613

ComplementaryTrenchMOSFET

■Features ●N-Channel: VDS(V)=30V ID=7.2A(VGS=10V) RDS(ON)

AO4613

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4613usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ItisESDprotected.StandardproductAO4613isPb-free(m

AO4613-HF

ComplementaryTrenchMOSFET

■Features ●N-Channel: VDS(V)=30V ID=7.2A(VGS=10V) RDS(ON)