Complementary Enhancement Mode Field Effect Transistor

Description ACE4612B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features N-channel • VDS=30V • VGS=20V • ID=6A P-cha

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MOSFET

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Power-Off Protection 짹5 V, 12 V, Quad SPST Switches with 5 廓 On Resistance

GENERAL DESCRIPTION The ADG4612/ADG4613 contain four independent single pole/single-throw (SPST) switches. The ADG4612 switches are turned on with Logic 1 on the appropriate control input. The ADG4613 has two switches with digital control logic similar to that of the ADG4612; the logic is inver

文件：393.95 Kbytes 页数：24 Pages

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亚德诺

Power-Off Protection 짹5 V, 12 V, Quad SPST Switches with 5 廓 On Resistance

GENERAL DESCRIPTION The ADG4612/ADG4613 contain four independent single pole/single-throw (SPST) switches. The ADG4612 switches are turned on with Logic 1 on the appropriate control input. The ADG4613 has two switches with digital control logic similar to that of the ADG4612; the logic is inver

文件：393.95 Kbytes 页数：24 Pages

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11.3 Gbps 12X12 Digital Crosspoint

GENERAL DESCRIPTION The ADN4612 is a 12 × 12 asynchronous, protocol agnostic, digital crosspoint switch with 12 differential PECL-/CML-compatible inputs and 12 differential CML outputs. The ADN4612 is optimized for nonreturn-to-zero (NRZ) signaling with data rates of up to 11.3 Gbps per port. Ea

文件：64.64 Kbytes 页数：2 Pages

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