ACE4606TB

30V Complementary Enhancement Mode Field Effect Transistor

Description TheACE4606TBusesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedininverterandotherapplications. Features N-channel •VDS=30V •ID=7A •RDS(ON)

ACE4606TBFM+H

30V Complementary Enhancement Mode Field Effect Transistor

Description TheACE4606TBusesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedininverterandotherapplications. Features N-channel •VDS=30V •ID=7A •RDS(ON)

AO4606

ComplementaryTrenchMOSFET

■Features ●N-Channel： VDS=30VID=6A RDS(ON)

AO4606

30VComplementaryMOSFET

AO4606

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4606usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications. ProductSummary N-Channel

AO4606

P-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnology

Description： ThisP-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)N-Channel:VDS=30V,ID=6.5A,RDS(ON)

AO4606

N-andP-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

AO4606

30VNP-ChannelEnhancementModeMOSFET

GeneralFeatures VDS=30VID=6A RDS(ON)

AO4606

30VNP-ChannelEnhancementModeMOSFET

Description TheAO4406usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeaturesVDS=30VID=6A RDS(ON)

AO4606A

N-andP-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank