30V Complementary Enhancement Mode Field Effect Transistor

Description The ACE4606TB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel • VDS=30V • ID=7A • RDS(ON)

文件：803.41 Kbytes 页数：10 Pages

ACE

30V Complementary Enhancement Mode Field Effect Transistor

Description The ACE4606TB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel • VDS=30V • ID=7A • RDS(ON)

文件：803.41 Kbytes 页数：10 Pages

ACE

MOSFET

ACE ele

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel

文件：687.48 Kbytes 页数：9 Pages

AOSMD

万国半导体

30V Complementary MOSFET

文件：551.43 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Trench MOSFET

■ Features ● N-Channel： VDS=30V ID=6A RDS(ON)

文件：2.63169 Mbytes 页数：7 Pages

KEXIN

科信电子