BLM4435

P-ChannelEnhancementModePowerMOSFET

CEM4435

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4435A

P-ChannelMOSFETusesadvancedtrenchtechnology

CEM4435A

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEM4435A

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-9A RDS(ON)

CEM4435A

P-ChannelEnhancementModePowerMOSFET

GENERALFEATURES| @Vos=-30Vjo=9A| ©Rosczmogesmioy| ®Ros(Ov=35mO@Ves=4.5V|

CET4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8.8A,RDS(ON)=24mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CET4435A

P-Channel35V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches,AdaptorSwitch -NotebookPCs