P-Channel Enhancement Mode Field Effect Transistor

Description The ACE3401B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features ● VDS(V)=-30V, ID=-4A ● RDS(ON)

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P-Channel Enhancement Mode MOSFET

Description The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：185.81 Kbytes 页数：8 Pages

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P-Channel Enhancement Mode MOSFET

文件：603.13 Kbytes 页数：7 Pages

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MOSFET

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MOSFET

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