丝印：AB5；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：229.55 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：AB541IQ1；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 150 V Using Machine Model (C = 200 pF, R = 0) State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JES

文件：344.02 Kbytes 页数：12 Pages

TI

德州仪器

丝印：AB541IQ1；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 150 V Using Machine Model (C = 200 pF, R = 0) State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JES

文件：344.02 Kbytes 页数：12 Pages

TI

德州仪器

丝印：AB533A；Package：TSSOP；OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：999.4 Kbytes 页数：18 Pages

TI

德州仪器

丝印：AB533A；Package：TSSOP；OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：999.4 Kbytes 页数：18 Pages

TI

德州仪器

丝印：AB534A；Package：SSOP；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：860.39 Kbytes 页数：21 Pages

TI

德州仪器

丝印：AB534A；Package：SSOP；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：860.39 Kbytes 页数：21 Pages

TI

德州仪器

丝印：AB540；Package：SSOP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：AB540；Package：SSOP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器

丝印：AB540；Package：SSOP；OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：818.44 Kbytes 页数：18 Pages

TI

德州仪器