丝印：AB3；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：229.55 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：AB3A；Package：VSSOP；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

文件：1.15771 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AB3A；Package：VSSOP；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

文件：1.15771 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AB3A；Package：VSSOP；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

文件：1.15771 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AB3A；Package：VSSOP；LMV65x 12-MHz, Low Voltage, Low Power Amplifiers

1 Features 1• Typical 5-V Supply, Unless Otherwise Noted • Specified 3-V and 5-V Performance • Low Power Supply Current – LMV651: 116 μA – LMV652: 118 μA per Amplifier – LMV654: 122 μA per Amplifier • High Unity-Gain Bandwidth: 12 MHz • Maximum Input Offset Voltage: 1.5 mV • CMRR: 100 dB

文件：1.15771 Mbytes 页数：39 Pages

TI

德州仪器

丝印：AB374A；Package：SSOP(DB)；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：1.55145 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AB374A；Package：SSOP(DB)；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：1.55145 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AB374A；Package：SSOP(DB)；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：1.55145 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AB374A；Package：SSOP(DB)；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：1.55145 Mbytes 页数：26 Pages

TI

德州仪器

丝印：AB374A；Package：TSSOP(PW)；OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce)

文件：1.55145 Mbytes 页数：26 Pages

TI

德州仪器