SEMICONDUCTOR PROTECTION FUSES

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ETCList of Unclassifed Manufacturers

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SEMICONDUCTOR PROTECTION FUSES

文件：435.52 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

包装：袋 类别：工业自动化与控制 气动，液压 - 配件 描述：SAE BAR MANIFOLD

ENERPAC PRODUCTION AUTOMATION

丝印：A60R175S6Z；Package：TO-220FA；600V 0.175Ω N-channel MOSFET

 Description Superior 6th generation SJ MOSFETs (S6-series) are cutting-edge high voltage power MOSFETs, based on Magnachip’s extensive design expertise and years of experience. The main strengths of S6- series are low on-resistance, low gate charge and reduced tendency for ringing. As a resul

文件：829.95 Kbytes 页数：10 Pages

MGCHIP

丝印：A60R1K0RFZ；Package：TO-220FA；600V 1.0Ω N-channel MOSFET

 Description MMF60R1K0RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：740 Kbytes 页数：10 Pages

MGCHIP

丝印：A6042AG；Package：DFN5X6-8L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6042AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Automotive application ● Power switching application ● Hard switched and high frequency circuits ●

文件：628.61 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：A6050KA；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

文件：1.05066 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：A6058K；Package：TO-252-2L；NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA6058K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =64A RDS(ON)

文件：905.23 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：A6080K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCEA6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

文件：934.36 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：A60A；Package：SMA；Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件：65.88 Kbytes 页数：3 Pages

CTC

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