A5800

BiMOS II Latched Drivers

FEATURES ■To4.4MHzDataInputRate ■High-Voltage, High-CurrentOutputs ■CMOS,NMOS, TTLCompatibleInputs ■OutputTransientProtection ■InternalPull-DownResistors ■Low-PowerCMOSLatches ■AutomotiveCapable

AG5800

IEEE802.3btPDModule

AO5800

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO5800usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas4.5V,inthesmallSC89-6Lfootprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow

AO5800E

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO5800EusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas4.5V,inthesmallSC89-6Lfootprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlo

AON5800

Common-DrainDualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON5800usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8Vwhileretaininga12VVGS(MAX)rating.ItisESDprotected.Thisdeviceissuitableforuseasauni-directionalorbi-directionalloadswi

APC5800E

DE-COMPRESSIONVOICEIC

CHIPFEATURES. ●DUALOPERATIONFREQUENCIES: -32.768KHZ&0.5SECONDTIMERINTERRUPT. -BUILT-INPLLCIRCUITTOGENERATESYSTEMCLOCKMAX20MHZ. ●BUILT-IN2KBYTES(1K*16)RAM. ●ADDRESSUPTO8MBYTE(4M*16)RAMORROMOR“ROMANDRAM” BUILT-IN16KBYTE(8K*16)PROGRAMROMAND0.5

APL5800

PLLModule

BA5800A

Li-SO2primarybatterysystem

CA5800C

TheRFLineWidebandLinearAmplifiers

CA5800CS

TheRFLineWidebandLinearAmplifiers