BiMOS II Latched Drivers

FEATURES ■ To 4.4 MHz Data Input Rate ■ High-Voltage, High-Current Outputs ■ CMOS, NMOS, TTL Compatible Inputs ■ Output Transient Protection ■ Internal Pull-Down Resistors ■ Low-Power CMOS Latches ■ Automotive Capable

文件：320.36 Kbytes 页数：13 Pages

ALLEGRO

BiMOS II 锁存型驱动器

采用BiMOS II锁存驱动程序 (BiMOS II Latched Drivers)

Allegro

IEEE802.3bt PD Module

文件：842.46 Kbytes 页数：22 Pages

SILVERTEL

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

文件：137.29 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

文件：129.37 Kbytes 页数：4 Pages

AOSMD

万国半导体