超声波换能器

Olympus

PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)

文件：43.91 Kbytes 页数：4 Pages

SIEMENS

西门子

Silicon Complementary Transistors High Voltage Video Amplifier

Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll

文件：23.91 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体