P-Channel Enhancement Mode Power MOSFET

Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -2.5A RDS(ON)

文件：809.17 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.6 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

流加密芯片

A12系列芯片支持SD接口，具有实时流加密处理能力，兼具高安全和低功耗特征，同时满足工业级性能要求,可应用于视频加密、无纸化办公、安全移动终端及工控领域。

WST

万协通

丝印：A12SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -2.5A RDS(ON)

文件：809.17 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

杜邦线/端子排线/电子线

JST

JST集团

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

APEC

富鼎先进

包装：散装 类别：电缆组件 矩形电缆组件 描述：JUMPER 12SR-3S - 12SR-3S 4\

JST Sales America Inc.

包装：散装 类别：电缆组件 矩形电缆组件 描述：JUMPER 12SR-3S - 12SR-3S 6\

JST Sales America Inc.

包装：散装 类别：电缆组件 矩形电缆组件 描述：JUMPER 12SR-3S - 12SR-3S 6\

JST Sales America Inc.