P-Channel Enhancement Mode Power MOSFET

Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -2.5A RDS(ON)

文件：809.17 Kbytes 页数：7 Pages

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丝印：A12SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features ● VDS = -20V,ID = -2.5A RDS(ON)

文件：809.17 Kbytes 页数：7 Pages

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未分类制造商

TO92

ALLEGRO

上传：深圳市粤科源兴科技有限公司

TO92

ALLEGRO

上传：深圳市粤科源兴科技有限公司

TO-92

ALLEGRO

上传：深圳市凌旭科技有限公司