丝印：A124TS；Package：SPT/SC-72；Digital transistors (built in resistor)

Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage o

文件：55.64 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：A124TS；Package：SPT/SC-72；Digital transistors (built in resistor)

Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage o

文件：122.85 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：A124XS；Package：SPT/SC-72；Digital transistors (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isola tion to allow positive biasing of the input. They also have the advan

文件：67.68 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：A125TS；Package：SPT/SC-72；Digital transistor (built-in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost compl

文件：50.15 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：A1220；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A

文件：1.00472 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：A1220A；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A

文件：1.00472 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：A1220A；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A

文件：1.00472 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：A1220；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A

文件：1.00472 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：A1281Y-；Package：TO-92-3L；PNP Epitaxial Silicon Transistor

Features • Audio Power Amplifier • 3 W Output Application

文件：175.81 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：A1268；Package：TO-92；EPITAXIAL PLANAR PNP TRANSISTOR (LOW NOISE AMPLIFIER, HIGH VOLTAGE)

LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • Low Noise. : NF=3dB(Typ.), Rg=100Ω, VCE=-6V, IC=-100μA, f=1kHz : NF=0.5dB(Typ.), Rg=1kΩ, VCE=-6V, IC=-100μA, f=1kHz. • High DC Current Gain : hFE=200∼700. • High Voltage : VCEO=-120V. • Low Pulse Noise. Low 1/f Noi

文件：413.71 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司