丝印：A06；Package：SOT23E；30V N-Channel Enhancement-Mode MOSFET

文件：438.79 Kbytes 页数：5 Pages

LRC

乐山无线电

BeO

Features: ♦ BeO Material ♦ DC - 3 GHz Performance ♦ 20 Watt Input Power ♦ Flange Mount General Description: The A0600-20-3X is a flanged 6 dB, BeO attenuator. It has an input power of 20 watts, while maintaining a constant flange temperature of 100°C. It offers a frequency range from D

文件：181.28 Kbytes 页数：1 Pages

BARRY

Vishay Barry

BeO 6 dB FLANGED ATTENUATOR

Features: ♦ BeO Material ♦ DC - 4 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount

文件：141.83 Kbytes 页数：1 Pages

BARRY

Vishay Barry

NPN SILICON TRANSISTOR

8550 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: A060AJ-00 Chip thickness: 240±20µm Core size: 600× 600µm 2 Welding position size: B pole 130×150µm 2; E pole 140×130µm 2 Electrode metal: aluminum Back metal: gold

文件：28.35 Kbytes 页数：1 Pages

Huashan

华汕电子器件

HIGH DENSITY IDC SOCKET

文件：276.12 Kbytes 页数：1 Pages

DBLECTRO

HIGH DENSITY IDC SOCKET

文件：276.12 Kbytes 页数：1 Pages

DBLECTRO

HIGH DENSITY IDC SOCKET

文件：276.12 Kbytes 页数：1 Pages

DBLECTRO

HIGH DENSITY IDC SOCKET

文件：276.12 Kbytes 页数：1 Pages

DBLECTRO

HIGH DENSITY IDC SOCKET

文件：276.12 Kbytes 页数：1 Pages

DBLECTRO

HIGH DENSITY IDC SOCKET

文件：276.12 Kbytes 页数：1 Pages

DBLECTRO