Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

文件：433.85 Kbytes 页数：8 Pages

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N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switchi

文件：407.13 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体

900V N-CHANNEL MOSFET

文件：299.08 Kbytes 页数：6 Pages

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9A, 900V N-CHANNEL POWER MOSFET

文件：255.65 Kbytes 页数：6 Pages

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9A, 900V N-CHANNEL   POWER MOSFET

The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) = 1.4Ω @VGS = 10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

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N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：246.23 Kbytes 页数：6 Pages

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N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：246.23 Kbytes 页数：6 Pages

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Fast Switching Speed

•DESCRIPTION •Drain Current ID= 9A@ TC=25℃ •Drain Source Voltage- : VDSS= 900V(Min) •Fast Switching Speed •APPLICATIONS •General purpose power amplifier

文件：58.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：246.23 Kbytes 页数：6 Pages

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Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

文件：433.85 Kbytes 页数：8 Pages

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