Trench Mosfet

GOFORD

谷峰半导体

Dual N-Channel 20-V (D-S) MOSFET

文件：981.89 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. Features • VDS

文件：735.63 Kbytes 页数：7 Pages

ACE

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：1.28744 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：1.28744 Mbytes 页数：7 Pages

VBSEMI

微碧半导体