丝印：9926；Package：SOP-8；Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

文件：1.66113 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：350.97 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：1.00679 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：9926；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =6A RDS(ON)

文件：207.86 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：9926；Package：SOP-8L；Dual N-Channel, 20V,5.3A, Power MOSFET

文件：981.06 Kbytes 页数：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：9926；Package：SOP-8L；Dual N-Channel, 20V,5.3A, Power MOSFET

文件：981.06 Kbytes 页数：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：9926；Package：SOP-8；Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

文件：1.66113 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

文件：226.13 Kbytes 页数：4 Pages

TUOFENG

拓锋半导体

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

AC LED Technology by Lynk Labs Compatible with Phase-cut Dimmers

文件：788 Kbytes 页数：5 Pages

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