丝印：9AE；Package：SOT-23；20V P-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@-4.5V, ID@-4A

文件：412.7 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：9AE；Package：SOT-23；20V P-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@-4.5V, ID@-4A

文件：413.06 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：9AE；Package：SOT8002-1；25 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Ultra low QG and QGD for high s

文件：325.41 Kbytes 页数：14 Pages

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