丝印：9926；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =6A RDS(ON)

文件：207.86 Kbytes 页数：7 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

Dual N-Channel E nhancement Mode Field Effect Transistor

FETURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：571.14 Kbytes 页数：8 Pages

Samhop

三合微科

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：984.02 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：351.47 Kbytes 页数：5 Pages

Samhop

三合微科